Ge 2p3/2
| name | unit | Ge |
| sample shape | wafer | |
| orbit | Ge 2p3/2 | |
| source | Ga Kα | |
| source energy | eV | 9251.74 |
| pass energy | eV | 200 |
| start energy (kinetic) | eV | 8018 |
| end energy (kinetic) | eV | 8038 |
| start energy (binding) | eV | 1230.04 |
| end energy (binding) | eV | 1210.04 |
| energy step | eV | 0.2 |
| dwell / point | sec | 1 |
| number of sweep | 3 | |
| mode | sweep | |
| total measurement time | min | 9.5 |
| entrance slit | mm | 0.5 |
| lens mode | transmission | |
| energy offset (work function) | 3.7 | |
| data points | 101 | |
| take off angle | deg | 88 |
| neutralize | ||
| comment |